MOSFET N-CH 500V 4.3A TO251-3
Type | Description |
---|---|
Series: | CoolMOS™ CE |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 13V |
Rds On (Max) @ Id, Vgs: | 950mOhm @ 1.2A, 13V |
Vgs(th) (Max) @ Id: | 3.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 10.5 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 231 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 53W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO251-3 |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AUIRF3710ZSTRRRochester Electronics |
MOSFET N-CH 100V 59A D2PAK |
|
IRF7465PBFRochester Electronics |
SMPS HEXFET POWER MOSFET |
|
FDBL0210N80Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 240A 8HPSOF |
|
IPZA60R099P7XKSA1Rochester Electronics |
MOSFET N-CH 600V 31A TO247-4 |
|
TPS1101DTexas Instruments |
MOSFET P-CH 15V 2.3A 8SOIC |
|
FQU9N25TUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 7.4A IPAK |
|
STB140NF75T4STMicroelectronics |
MOSFET N-CH 75V 120A D2PAK |
|
TK16A60W,S4VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 15.8A TO220SIS |
|
BUK9515-100A127Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
APT84F50B2Roving Networks / Microchip Technology |
MOSFET N-CH 500V 84A T-MAX |
|
NTMFS4834NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13A/130A 5DFN |
|
STP5N80K5STMicroelectronics |
MOSFET N-CH 800V 4A TO220 |
|
CSD17577Q3ATTexas Instruments |
MOSFET N-CH 30V 35A 8VSON |