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IPU60R2K1CEBKMA1

IPU60R2K1CEBKMA1

MOSFET N-CH 600V 2.3A TO251-3

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IPU60R2K1CEBKMA1

IPU60R2K1CEBKMA1

Image is for reference, please contact us to get the real picture

Part No :

IPU60R2K1CEBKMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 2.3A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
1471919 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IPU60R2K1CEBKMA1 PDF
Type Description
Series:CoolMOS™ CE
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.1Ohm @ 760mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs:6.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 100 V
FET Feature:-
Power Dissipation (Max):22W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
IPU60R2K1CEBKMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPU60R2K1CEBKMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPU60R2K1CEBKMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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