MOSFET P-CH 100V 13A DPAK
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 205mOhm @ 7.8A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 58 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 760 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 66W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDB0165N807LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 310A TO263-7 |
|
DMN2320UFB4-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 1A X2-DFN1006-3 |
|
IRL530NSPBFRochester Electronics |
HEXFET POWER MOSFET |
|
FDC640PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 4.5A SUPERSOT6 |
|
BSC100N10NSFGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 11.4/90A 8TDSON |
|
SIDR626DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 42.8A/100A PPAK |
|
BUZ101LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMN6140LQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1.6A SOT23 |
|
IRLM220ATFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 1.13A SOT223-4 |
|
FDWS9508L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 40V 80A 8PQFN |
|
IXTT96N15PWickmann / Littelfuse |
MOSFET N-CH 150V 96A TO268 |
|
AO5404EAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 20V 500MA SC89-3 |
|
SIA441DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 12A PPAK SC70-6 |