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BSC100N10NSFGATMA1

BSC100N10NSFGATMA1

MOSFET N-CH 100V 11.4/90A 8TDSON

BSC100N10NSFGATMA1

BSC100N10NSFGATMA1

Image is for reference, please contact us to get the real picture

Part No :

BSC100N10NSFGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 11.4/90A 8TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
680468 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 01 - Dec 05 2024
PDF
BSC100N10NSFGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:11.4A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 50 V
FET Feature:-
Power Dissipation (Max):156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-1
Package / Case:8-PowerTDFN
BSC100N10NSFGATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSC100N10NSFGATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSC100N10NSFGATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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