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IPU60R1K0CEAKMA2

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MOSFET N-CH 600V 4.3A TO251-3

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IPU60R1K0CEAKMA2

IPU60R1K0CEAKMA2

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Part No :

IPU60R1K0CEAKMA2

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 4.3A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11599 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 02 - Nov 06 2025
PDF
IPU60R1K0CEAKMA2 PDF
Type Description
Series:CoolMOS™ CE
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 100 V
FET Feature:-
Power Dissipation (Max):61W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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