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SI7434DP-T1-GE3

SI7434DP-T1-GE3

MOSFET N-CH 250V 2.3A PPAK SO-8

10-03200

10-03200

CBL ASSEM 3.5MM 3CON R/A M 4.5M

SI7434DP-T1-GE3

SI7434DP-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SI7434DP-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 250V 2.3A PPAK SO-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10635 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 02 - Nov 06 2024
PDF
SI7434DP-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:155mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):1.9W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
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