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RD3G03BATTL1

RD3G03BATTL1

PCH -40V -35A POWER MOSFET - RD3

1456RL3WHBU

1456RL3WHBU

CONSOLE ALUM 17.12"L X 11.61"W

RD3G03BATTL1

RD3G03BATTL1

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Part No :

RD3G03BATTL1

Manufacturer
ROHM Semiconductor
Description
PCH -40V -35A POWER MOSFET - RD3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
010201 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:35A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:19.1mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2100 pF @ 20 V
FET Feature:-
Power Dissipation (Max):56W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
RD3G03BATTL1 is available at GangBo-ic.com, Please review product page below for detailed information, including RD3G03BATTL1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RD3G03BATTL1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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