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SI2325DS-T1-GE3

SI2325DS-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SI2325DS-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 150V 530MA SOT23-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12328 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 19 - Apr 23 2025
PDF
SI2325DS-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:510 pF @ 25 V
FET Feature:-
Power Dissipation (Max):750mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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