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NDD60N550U1-1G

NDD60N550U1-1G

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NDD60N550U1-1G

NDD60N550U1-1G

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Part No :

NDD60N550U1-1G

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 8.2A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
20475 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 20 - Apr 24 2025
PDF
NDD60N550U1-1G PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:8.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:540 pF @ 50 V
FET Feature:-
Power Dissipation (Max):94W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:IPAK (TO-251)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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