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FCU2250N80Z

FCU2250N80Z

MOSFET N-CH 800V 2.6A I-PAK

FCU2250N80Z

FCU2250N80Z

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Part No :

FCU2250N80Z

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 800V 2.6A I-PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
96353 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 26 - Mar 02 2025
PDF
FCU2250N80Z PDF
Type Description
Series:SuperFET® II
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.25Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 260µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:585 pF @ 100 V
FET Feature:-
Power Dissipation (Max):39W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
FCU2250N80Z is available at GangBo-ic.com, Please review product page below for detailed information, including FCU2250N80Z price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FCU2250N80Z to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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