LED DRIVER CC AC/DC 16-48V 830MA
GANFET N-CH 100V 1.7A DIE
Type | Description |
---|---|
Series: | eGaN® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 25mOhm @ 3A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 2.1 nC @ 5 V |
Vgs (Max): | +6V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: | 258 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die |
Package / Case: | Die |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
SQD50P06-15L_GE3Vishay / Siliconix |
MOSFET P-CH 60V 50A TO252 |
![]() |
IXFH160N15T2Wickmann / Littelfuse |
MOSFET N-CH 150V 160A TO247AD |
![]() |
DMN62D1SFB-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 410MA 3DFN |
![]() |
BSO051N03MSGXUMA1Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
![]() |
IRFR2905ZTRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 42A DPAK |
![]() |
NDT454PRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 5 |
![]() |
FDS3572Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 8.9A 8SOIC |
![]() |
FDPF33N25TRDTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 250V TO220F |
![]() |
AOD514Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 17A/46A TO252 |
![]() |
UPA1818GR-9JG-E1-ARochester Electronics |
MOSFET P-CH 20V 10A 8TSSOP |
![]() |
IXTH64N10L2Wickmann / Littelfuse |
MOSFET N-CH 100V 64A TO247 |
![]() |
IRF3610STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 103A D2PAK |
![]() |
IPI47N10SL26AKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 47A TO262-3 |