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FDB0170N607L

FDB0170N607L

POWER FIELD-EFFECT TRANSISTOR, N

FDB0170N607L

FDB0170N607L

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Part No :

FDB0170N607L

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, N
Catalog
Transistors - FETs, MOSFETs - Single
Availability
26400 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 26 - Mar 02 2025
PDF
FDB0170N607L PDF
Type Description
Series:PowerTrench®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4mOhm @ 39A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:243 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:19.25 pF @ 30 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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