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RES 0.05 OHM 1% 1W 2512

BUZ32 H

BUZ32 H

MOSFET N-CH 200V 9.5A TO220-3

BUZ32 H

BUZ32 H

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Part No :

BUZ32 H

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 200V 9.5A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
449944 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
PDF
BUZ32 H PDF
Type Description
Series:SIPMOS®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:400mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:530 pF @ 25 V
FET Feature:-
Power Dissipation (Max):75W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
BUZ32 H is available at GangBo-ic.com, Please review product page below for detailed information, including BUZ32 H price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BUZ32 H to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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