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IRFHM8326TRPBF

IRFHM8326TRPBF

MOSFET N-CH 30V 25A PQFN

FFSD-20-D-70.00-01-N

FFSD-20-D-70.00-01-N

.050 X .050 C.L. FEMALE IDC ASSE

BFC236816824

BFC236816824

CAP FILM 0.82UF 5% 63VDC RADIAL

IRFHM8326TRPBF

IRFHM8326TRPBF

Image is for reference, please contact us to get the real picture

Part No :

IRFHM8326TRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 25A PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
509950 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 26 - Mar 02 2025
PDF
IRFHM8326TRPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2496 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2.8W (Ta), 37W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:-
Package / Case:8-PowerTDFN
IRFHM8326TRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFHM8326TRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFHM8326TRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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