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SI2309CDS-T1-GE3

SI2309CDS-T1-GE3

MOSFET P-CH 60V 1.6A SOT23-3

252B124A40NA

252B124A40NA

JOYSTICK 120K OHM 2 AXIS TH

SI2309CDS-T1-GE3

SI2309CDS-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SI2309CDS-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 60V 1.6A SOT23-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
999899 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
PDF
SI2309CDS-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:345mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.1 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:210 pF @ 30 V
FET Feature:-
Power Dissipation (Max):1W (Ta), 1.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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