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2N6806

2N6806

POWER FIELD-EFFECT TRANSISTOR, P

RM12WBP-2P(71)

RM12WBP-2P(71)

CONN PLUG MALE 2 POS

2N6806

2N6806

Image is for reference, please contact us to get the real picture

Part No :

2N6806

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR, P
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19900 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
Type Description
Series:*
Package:Bulk
Part Status:Active
FET Type:-
Technology:-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:-
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:-
Supplier Device Package:-
Package / Case:-
2N6806 is available at GangBo-ic.com, Please review product page below for detailed information, including 2N6806 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 2N6806 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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