MOSFET N-CH 1000V 14A TO247
Type | Description |
---|---|
Series: | POWER MOS 8™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1000 V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 900mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 120 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 3965 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 500W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 [B] |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRF9Z24NPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 12A TO220AB |
|
IPN50R3K0CEATMA1IR (Infineon Technologies) |
MOSFET N-CH 500V 2.6A SOT223 |
|
SFS9614Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
SI2323DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 3.7A SOT23-3 |
|
SISS27DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 50A PPAK 1212-8S |
|
RQ3E075ATTBROHM Semiconductor |
MOSFET P-CHANNEL 30V 18A 8HSMT |
|
R6007JNJGTLROHM Semiconductor |
MOSFET N-CH 600V 7A LPTS |
|
SIHG30N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 29A TO247AC |
|
BUK7Y22-100E115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
MSC750SMA170SRoving Networks / Microchip Technology |
TRANS SJT 1700V D3PAK |
|
FDP6676Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTT140N10PWickmann / Littelfuse |
MOSFET N-CH 100V 140A TO268 |
|
AUIRF7749L2TRIR (Infineon Technologies) |
MOSFET N-CH 60V 36A DIRECTFET |