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IPN50R3K0CEATMA1

IPN50R3K0CEATMA1

MOSFET N-CH 500V 2.6A SOT223

IPN50R3K0CEATMA1

IPN50R3K0CEATMA1

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Part No :

IPN50R3K0CEATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 500V 2.6A SOT223
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14496 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 26 - Dec 30 2024
PDF
IPN50R3K0CEATMA1 PDF
Type Description
Series:CoolMOS™ CE
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):13V
Rds On (Max) @ Id, Vgs:3Ohm @ 400mA, 13V
Vgs(th) (Max) @ Id:3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs:4.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:84 pF @ 100 V
FET Feature:-
Power Dissipation (Max):5W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223
Package / Case:SOT-223-3
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