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MOSFET N-CH 600V 2.5A TO220SIS

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TK3A60DA(Q,M)

TK3A60DA(Q,M)

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Part No :

TK3A60DA(Q,M)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 600V 2.5A TO220SIS
Catalog
Transistors - FETs, MOSFETs - Single
Availability
369736 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
TK3A60DA(Q,M) PDF
Type Description
Series:π-MOSVII
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.8Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id:4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 25 V
FET Feature:-
Power Dissipation (Max):30W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220SIS
Package / Case:TO-220-3 Full Pack
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