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SIR681DP-T1-RE3

SIR681DP-T1-RE3

MOSFET P-CH 80V 17.6A/71.9A PPAK

SIR681DP-T1-RE3

SIR681DP-T1-RE3

Image is for reference, please contact us to get the real picture

Part No :

SIR681DP-T1-RE3

Manufacturer
Vishay / Siliconix
Description
MOSFET P-CH 80V 17.6A/71.9A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
409740 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:17.6A (Ta), 71.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:11.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:105 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4850 pF @ 40 V
FET Feature:-
Power Dissipation (Max):6.25W (Ta), 104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
SIR681DP-T1-RE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SIR681DP-T1-RE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SIR681DP-T1-RE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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