MOSFET N-CHANNEL 60V 300MA TO92
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 300mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 5Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.4 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7.32 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 400mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPP60R180P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 18A TO220-3 |
|
STB10LN80K5STMicroelectronics |
MOSFET N-CHANNEL 800V 8A D2PAK |
|
PMN50UPE,115Rochester Electronics |
MOSFET P-CH 20V 3.6A 6TSOP |
|
STB80NF55-08AGSTMicroelectronics |
MOSFET N-CHANNEL 55V 80A D2PAK |
|
IPL65R070C7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 28A 4VSON |
|
IPD50N04S4-08Rochester Electronics |
IPD50N04 - 20V-40V N-CHANNEL AUT |
|
FDD8750Rochester Electronics |
MOSFET N-CH 25V 6.5A/2.7A DPAK |
|
DN2540N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 400V 170MA TO243AA |
|
FQA13N50C-F109Rochester Electronics |
MOSFET N-CH 500V 13.5A TO3P |
|
STW35N65M5STMicroelectronics |
MOSFET N-CH 650V 27A TO247-3 |
|
IPB033N10N5LFATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 120A TO263-3 |
|
IRFH8321TRPBFRochester Electronics |
IRFH8321 - HEXFET POWER MOSFET |
|
IXTH96N20PWickmann / Littelfuse |
MOSFET N-CH 200V 96A TO247 |