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SISA26DN-T1-GE3

SISA26DN-T1-GE3

MOSFET N-CH 25V 60A PPAK1212-8S

SMBJ16AHM3_A/H

SMBJ16AHM3_A/H

TVS DIODE DO214AA

SISA26DN-T1-GE3

SISA26DN-T1-GE3

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Part No :

SISA26DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 25V 60A PPAK1212-8S
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11658 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
SISA26DN-T1-GE3 PDF
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds:2247 pF @ 10 V
FET Feature:-
Power Dissipation (Max):39W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
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