MOSFET P-CH 60V 2.9A 6TSOP
IDC CABLE - CSC26S/AE26G/CCE26S
4IN NOM BH MED DUTY CASTER:PU ST
Type | Description |
---|---|
Series: | TrenchFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 2.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 216mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 350 pF @ 30 V |
FET Feature: | - |
Power Dissipation (Max): | 2W (Ta), 3.3W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-TSOP |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SSM3K72CTC,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 150MA CST3C |
|
RCD080N25TLROHM Semiconductor |
MOSFET N-CH 250V 8A CPT3 |
|
MSC100SM70JCU2Roving Networks / Microchip Technology |
TRANS SJT N-CH 700V 124A SOT227 |
|
SI7804DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 6.5A PPAK1212-8 |
|
IPA65R190E6Rochester Electronics |
IPA65R190 - 650V AND 700V COOLMO |
|
FQPF33N10LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 18A TO220F |
|
CPH3327-TL-ERochester Electronics |
MOSFET P-CH 100V 600MA 3CPH |
|
STF11N65M5STMicroelectronics |
MOSFET N-CH 650V 9A TO220FP |
|
SPD15P10PGRochester Electronics |
SPD15P10 - 20V-250V P-CHANNEL PO |
|
IRFSL3006PBFIR (Infineon Technologies) |
MOSFET N-CH 60V 195A TO262 |
|
NVMFS5C628NLAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 28A/150A 5DFN |
|
PSMN1R0-40YSHXNexperia |
MOSFET N-CH 40V 290A LFPAK56 |
|
FDMS7698Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |