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RS1E281BNTB1

RS1E281BNTB1

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Part No :

RS1E281BNTB1

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 30V 28A/80A 8HSOP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12475 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 04 - Jun 08 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:28A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.3mOhm @ 28A, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:94 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5100 pF @ 15 V
FET Feature:-
Power Dissipation (Max):3W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-HSOP
Package / Case:8-PowerTDFN
RS1E281BNTB1 is available at GangBo-ic.com, Please review product page below for detailed information, including RS1E281BNTB1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RS1E281BNTB1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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