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IPL65R1K0C6SATMA1

IPL65R1K0C6SATMA1

MOSFET N-CH 650V 4.2A THIN-PAK

IPL65R1K0C6SATMA1

IPL65R1K0C6SATMA1

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Part No :

IPL65R1K0C6SATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 650V 4.2A THIN-PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14295 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 14 - Jan 18 2025
PDF
IPL65R1K0C6SATMA1 PDF
Type Description
Series:CoolMOS™ C6
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:328 pF @ 100 V
FET Feature:-
Power Dissipation (Max):34.7W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Thin-PAK (5x6)
Package / Case:8-PowerTDFN
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