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NTD23N03RT4G

NTD23N03RT4G

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NTD23N03RT4G

NTD23N03RT4G

Image is for reference, please contact us to get the real picture

Part No :

NTD23N03RT4G

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 25V 3.8A/17.1A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
1087826 pieces
Shipped from
HK warehouse
Expected Shipping Date
Apr 12 - Apr 16 2025
PDF
NTD23N03RT4G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Ta), 17.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4V, 5V
Rds On (Max) @ Id, Vgs:45mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.76 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 20 V
FET Feature:-
Power Dissipation (Max):1.14W (Ta), 22.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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