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TK8A65D(STA4,Q,M)

TK8A65D(STA4,Q,M)

MOSFET N-CH 650V 8A TO220SIS

7.TA.0.ITU

7.TA.0.ITU

HIGH PREC.TW CURVED FINE 4.72"

TK8A65D(STA4,Q,M)

TK8A65D(STA4,Q,M)

Image is for reference, please contact us to get the real picture

Part No :

TK8A65D(STA4,Q,M)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 650V 8A TO220SIS
Catalog
Transistors - FETs, MOSFETs - Single
Availability
798979 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 02 - Jun 06 2024
PDF
TK8A65D(STA4,Q,M) PDF
Type Description
Series:π-MOSVII
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:840mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 25 V
FET Feature:-
Power Dissipation (Max):45W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220SIS
Package / Case:TO-220-3 Full Pack
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