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IRLI610ATU

IRLI610ATU

MOSFET N-CH 200V 3.3A I2PAK

IRLI610ATU

IRLI610ATU

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Part No :

IRLI610ATU

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 200V 3.3A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
PDF
IRLI610ATU PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 1.65A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:240 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.1W (Ta), 33W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IRLI610ATU is available at GangBo-ic.com, Please review product page below for detailed information, including IRLI610ATU price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRLI610ATU to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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