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G2R1000MT33J

G2R1000MT33J

SIC MOSFET N-CH 4A TO263-7

G2R1000MT33J

G2R1000MT33J

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Part No :

G2R1000MT33J

Manufacturer
GeneSiC Semiconductor
Description
SIC MOSFET N-CH 4A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11130 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 26 - Dec 30 2024
Type Description
Series:G2R™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):3300 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id:3.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 20 V
Vgs (Max):+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds:238 pF @ 1000 V
FET Feature:-
Power Dissipation (Max):74W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
G2R1000MT33J is available at GangBo-ic.com, Please review product page below for detailed information, including G2R1000MT33J price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for G2R1000MT33J to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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