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NVMS10P02R2G

NVMS10P02R2G

MOSFET P-CH 20V 10A 8SOIC

NVMS10P02R2G

NVMS10P02R2G

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Part No :

NVMS10P02R2G

Manufacturer
Rochester Electronics
Description
MOSFET P-CH 20V 10A 8SOIC
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14700 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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