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IRFS59N10DPBF

IRFS59N10DPBF

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IRFS59N10DPBF

IRFS59N10DPBF

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Part No :

IRFS59N10DPBF

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 100V 59A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
478547 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
IRFS59N10DPBF PDF
Type Description
Series:HEXFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:59A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:25mOhm @ 35.4A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:114 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2.45 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.8W (Ta), 200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS59N10DPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFS59N10DPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFS59N10DPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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