MOSFET N-CH 20V 4.1A SUPERSOT6
IC SRAM 18MBIT PARALLEL 100TQFP
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 4.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
Rds On (Max) @ Id, Vgs: | 60mOhm @ 4.1A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 14 nC @ 4.5 V |
Vgs (Max): | 8V |
Input Capacitance (Ciss) (Max) @ Vds: | 365 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 1.6W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SuperSOT™-6 |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
SI7322DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 100V 18A PPAK 1212-8 |
![]() |
NTHS5441T1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.9A CHIPFET |
![]() |
AOD4189Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 40V 40A TO252 |
![]() |
IRF640PBFVishay / Siliconix |
MOSFET N-CH 200V 18A TO220AB |
![]() |
IPW60R125CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 18A TO247-3 |
![]() |
DMT35M7LFV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 76A POWERDI3333 |
![]() |
STP25N80K5STMicroelectronics |
MOSFET N-CH 800V 19.5A TO220 |
![]() |
BSS192PE6327Rochester Electronics |
MOSFET P-CH 250V 190MA SOT89 |
![]() |
FQP33N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 33A TO220-3 |
![]() |
STL9N65M2STMicroelectronics |
MOSFET N-CH 650V POWERFLAT 5X5 H |
![]() |
IPB120N04S302ATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
BUK9D23-40EXNexperia |
MOSFET N-CH 40V 8A DFN2020MD-6 |
![]() |
IPDD60R102G7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 23A HDSOP-10 |