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IAUC100N04S6N028ATMA1

IAUC100N04S6N028ATMA1

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Part No :

IAUC100N04S6N028ATMA1

Manufacturer
IR (Infineon Technologies)
Description
IAUC100N04S6N028ATMA1
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14991 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 18 - Feb 22 2025
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7V, 10V
Rds On (Max) @ Id, Vgs:2.86mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3V @ 24µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1781 pF @ 25 V
FET Feature:-
Power Dissipation (Max):62W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8
Package / Case:8-PowerTDFN
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