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FDD6778A

FDD6778A

MOSFET N-CH 25V 12A/10A DPAK

TB-14.7456MDE-T

TB-14.7456MDE-T

MEMS OSC XO 14.7456MHZ CMOS SMD

FDD6778A

FDD6778A

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Part No :

FDD6778A

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 25V 12A/10A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
128596 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
FDD6778A PDF
Type Description
Series:PowerTrench®
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:870 pF @ 13 V
FET Feature:-
Power Dissipation (Max):3.7W (Ta), 24W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6778A is available at GangBo-ic.com, Please review product page below for detailed information, including FDD6778A price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDD6778A to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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