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IPD60R180P7SE8228AUMA1

IPD60R180P7SE8228AUMA1

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IPD60R180P7SE8228AUMA1

IPD60R180P7SE8228AUMA1

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Part No :

IPD60R180P7SE8228AUMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 600V 18A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
528452 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 06 - Jul 10 2025
Type Description
Series:CoolMOS™ P7
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1081 pF @ 400 V
FET Feature:-
Power Dissipation (Max):72W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD60R180P7SE8228AUMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD60R180P7SE8228AUMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD60R180P7SE8228AUMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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[email protected]

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