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BSZ086P03NS3EGATMA1

BSZ086P03NS3EGATMA1

MOSFET P-CH 30V 13.5A/40A TSDSON

MS27656T11F2BB

MS27656T11F2BB

8LT 2C 2#16 SKT RECP

BSZ086P03NS3EGATMA1

BSZ086P03NS3EGATMA1

Image is for reference, please contact us to get the real picture

Part No :

BSZ086P03NS3EGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 30V 13.5A/40A TSDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
22949 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
PDF
BSZ086P03NS3EGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:13.5A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:8.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3.1V @ 105µA
Gate Charge (Qg) (Max) @ Vgs:57.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:4785 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8
Package / Case:8-PowerTDFN
BSZ086P03NS3EGATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSZ086P03NS3EGATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSZ086P03NS3EGATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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