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SISA40DN-T1-GE3

SISA40DN-T1-GE3

MOSFET N-CH 20V 43.7A/162A PPAK

2276-1032-AL

2276-1032-AL

3/8 HEX X 4-1/2 LENGTH

SISA40DN-T1-GE3

SISA40DN-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SISA40DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 20V 43.7A/162A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
778377 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:43.7A (Ta), 162A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:1.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
Vgs (Max):+12V, -8V
Input Capacitance (Ciss) (Max) @ Vds:3415 pF @ 10 V
FET Feature:-
Power Dissipation (Max):3.7W (Ta), 52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8
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