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IPB80N06S4L05ATMA1

IPB80N06S4L05ATMA1

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Part No :

IPB80N06S4L05ATMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 60V 80A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
898389 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
PDF
IPB80N06S4L05ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2.2V @ 60µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:8.18 pF @ 25 V
FET Feature:-
Power Dissipation (Max):107W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB80N06S4L05ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB80N06S4L05ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB80N06S4L05ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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