MOSFET N-CH 25V 13.3A/89A DPAK
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25 V |
Current - Continuous Drain (Id) @ 25°C: | 13.3A (Ta), 89A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4.7mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 27 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2.241 pF @ 12 V |
FET Feature: | - |
Power Dissipation (Max): | 1.33W (Ta), 60W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STU150N3LLH6STMicroelectronics |
MOSFET N-CH 30V 80A IPAK |
|
NTPF082N65S3FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 40A TO220F |
|
SIA483ADJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 10.6A/12A PPAK |
|
IRFD213Rochester Electronics |
MOSFET N-CH 250V 450MA 4DIP |
|
IXTQ140N10PWickmann / Littelfuse |
MOSFET N-CH 100V 140A TO3P |
|
BSP373NH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 1.8A SOT223-4 |
|
IRL2703PBFRochester Electronics |
HEXFET POWER MOSFET |
|
SSM3K345R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 20V 4A SOT23F |
|
IXFH80N25X3Wickmann / Littelfuse |
MOSFET N-CH 250V 80A TO247 |
|
AOT260LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 20A/140A TO220 |
|
TJ90S04M3L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 90A DPAK |
|
IRFB4620PBFIR (Infineon Technologies) |
MOSFET N-CH 200V 25A TO220AB |
|
IPP80N06S2H5AKSA2Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |