HEATSINK 40X40X30MM L-TAB T766
HEXFET POWER MOSFET
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 40mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15 nC @ 4.5 V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 450 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 45W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SSM3K345R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 20V 4A SOT23F |
|
IXFH80N25X3Wickmann / Littelfuse |
MOSFET N-CH 250V 80A TO247 |
|
AOT260LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 20A/140A TO220 |
|
TJ90S04M3L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 90A DPAK |
|
IRFB4620PBFIR (Infineon Technologies) |
MOSFET N-CH 200V 25A TO220AB |
|
IPP80N06S2H5AKSA2Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
RS1G120MNTBROHM Semiconductor |
MOSFET N-CH 40V 12A 8HSOP |
|
STP2N62K3STMicroelectronics |
MOSFET N-CH 620V 2.2A TO220 |
|
AUIRFS4127TRLRochester Electronics |
MOSFET N-CH 200V 72A D2PAK |
|
APT80M60JRoving Networks / Microchip Technology |
MOSFET N-CH 600V 84A ISOTOP |
|
BUK9M85-60EXNexperia |
MOSFET N-CH 60V 12.8A LFPAK33 |
|
NTDV5805NT4GRochester Electronics |
MOSFET N-CH 40V 51A DPAK |
|
IRLR110TRVishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |