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SIRA50DP-T1-RE3

SIRA50DP-T1-RE3

MOSFET N-CH 40V 62.5A/100A PPAK

22759/33-28-2

22759/33-28-2

CABLE 1 COND 28AWG SHIELDED

BYS10-25HE3/TR

BYS10-25HE3/TR

DIODE SCHOTTKY 25V 1.5A DO214AC

XC6210D10APR-G

XC6210D10APR-G

IC REG LIN 1.05V 500MA SOT89-5

SIRA50DP-T1-RE3

SIRA50DP-T1-RE3

Image is for reference, please contact us to get the real picture

Part No :

SIRA50DP-T1-RE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 40V 62.5A/100A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16329 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
SIRA50DP-T1-RE3 PDF
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:62.5A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:194 nC @ 10 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:8445 pF @ 20 V
FET Feature:-
Power Dissipation (Max):6.25W (Ta), 100W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8
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