MOSFET N-CH 60V 55A TO220AB
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 16.5mOhm @ 31A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 67 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1812 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 115W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRF610LPBFVishay / Siliconix |
MOSFET N-CH 200V 3.3A I2PAK |
|
IXFK102N30PWickmann / Littelfuse |
MOSFET N-CH 300V 102A TO264AA |
|
MCH3474-TL-ERochester Electronics |
MOSFET N-CH 30V 4A SC70FL/MCPH3 |
|
SIS108DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 6.7A/16A PPAK |
|
NTTFS4824NTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8.3A/69A 8WDFN |
|
FQB11N40CTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 10.5A D2PAK |
|
IPD50N04S308ATMA1-INFRochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
STF3LN80K5STMicroelectronics |
MOSFET N-CH 800V 2A TO220FP |
|
IPB117N20NFDATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 84A TO263-3 |
|
PMN120ENEAXNexperia |
MOSFET N-CH 60V 2.5A 6TSOP |
|
FQPF22N30Rochester Electronics |
MOSFET N-CH 300V 12A TO220F |
|
CPH6354-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 4A 6CPH |
|
2SK3510-AZRochester Electronics |
MOSFET N-CH 75V 83A TO220AB |