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IRF610LPBF

IRF610LPBF

MOSFET N-CH 200V 3.3A I2PAK

IRF610LPBF

IRF610LPBF

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Part No :

IRF610LPBF

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 200V 3.3A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
047604 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jan 19 - Jan 23 2025
PDF
IRF610LPBF PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3W (Ta), 36W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IRF610LPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRF610LPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRF610LPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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