MOSFET N-CH 60V 120A D2PAK
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4.2mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 125 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4.52 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 230W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIR624DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 200V 5.7A/18.6A PPAK |
|
2SK1290-AZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIHD9N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 9A DPAK |
|
SPW20N60C3FKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 20.7A TO247-3 |
|
R6011ENJTLROHM Semiconductor |
MOSFET N-CH 600V 11A LPTS |
|
ZVN4206GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1A SOT223 |
|
BSC0902NSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 23A/100A TDSON |
|
IPSA70R600P7SAKMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 8.5A TO251-3 |
|
2SJ305TE85LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 200MA SC59 |
|
DMP32D5LFA-7BZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 300MA 3DFN |
|
TPC8132,LQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 7A 8SOP |
|
SI9435BDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 4.1A 8SO |
|
NDF08N50ZHRochester Electronics |
MOSFET N-CH 500V 8.5A TO220FP |