MOSFET N-CH 700V 8.5A TO251-3
Type | Description |
---|---|
Series: | CoolMOS™ P7 |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 700 V |
Current - Continuous Drain (Id) @ 25°C: | 8.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 600mOhm @ 1.8A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs: | 10.5 nC @ 400 V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 364 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 43.1W (Tc) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO251-3 |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
2SJ305TE85LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 200MA SC59 |
|
DMP32D5LFA-7BZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 300MA 3DFN |
|
TPC8132,LQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 40V 7A 8SOP |
|
SI9435BDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 4.1A 8SO |
|
NDF08N50ZHRochester Electronics |
MOSFET N-CH 500V 8.5A TO220FP |
|
RSD221N06TLROHM Semiconductor |
MOSFET N-CH 60V 22A CPT3 |
|
HUF76132S3SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
MMFT2N02ELT1Rochester Electronics |
MOSFET N-CH 20V 1.6A SOT223 |
|
C3M0021120DWolfspeed - a Cree company |
SICFET N-CH 1200V 100A TO247-3 |
|
SUM110P06-07L-E3Vishay / Siliconix |
MOSFET P-CH 60V 110A TO263 |
|
PSMN7R6-60BS,118Nexperia |
MOSFET N-CH 60V 92A D2PAK |
|
SIR688DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8 |
|
IRFBA1404PPBFRochester Electronics |
MOSFET N-CH 40V 206A SUPER-220 |