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UF3C120080B7S

UF3C120080B7S

SICFET P-CH 1200V 28.8A D2PAK-7

UF3C120080B7S

UF3C120080B7S

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Part No :

UF3C120080B7S

Manufacturer
UnitedSiC
Description
SICFET P-CH 1200V 28.8A D2PAK-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10720 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:28.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:105mOhm @ 20A, 12V
Vgs(th) (Max) @ Id:6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 12 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:754 pF @ 100 V
FET Feature:-
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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