MOSFET N-CH 900V 3.6A TO247-3
IC DRAM 512MBIT PARALLEL 60VFBGA
DC-DC
DC DC CONVERTER 12V
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 900 V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 3.7Ohm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 78 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1200 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 125W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTMS4939NR2GRochester Electronics |
MOSFET N-CH 30V 8A 8SOIC |
|
IPLK70R1K4P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 700V TDSON-8 |
|
DMTH32M5LPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 170A PWRDI5060-8 |
|
RSY200N05TLROHM Semiconductor |
MOSFET N-CH 45V 20A TCPT3 |
|
ZVN4306AVZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1.1A TO92-3 |
|
TK20V60W5,LVQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 20A 4DFN |
|
SI1441EDH-T1-BE3Vishay / Siliconix |
MOSFET P-CH 20V 4A/4A SC70-6 |
|
FDPF320N06LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 21A TO220F |
|
AOI7N65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 7A TO251A |
|
HUFA76419D3SRochester Electronics |
MOSFET N-CH 60V 20A TO252AA |
|
IXFP220N06T3Wickmann / Littelfuse |
MOSFET N-CH 60V 220A TO220AB |
|
RM2312Rectron USA |
MOSFET N-CHANNEL 20V 4.5A SOT23 |
|
IPB051NE8NGRochester Electronics |
N-CHANNEL POWER MOSFET |