MOSFET N-CH 650V 15A TO220F
Type | Description |
---|---|
Series: | FRFET®, SuperFET® II |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 260mOhm @ 7.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 60 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2.34 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 36W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FDD9407L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 100A DPAK |
|
DMN10H099SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 17A TO252 |
|
2SK3306B-S17-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
PSMN2R5-60PL127Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQP4P40Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 400V 3.5A TO220-3 |
|
FDI047AN08A0Rochester Electronics |
MOSFET N-CH 75V 80A I2PAK |
|
PHP33NQ20T,127Nexperia |
MOSFET N-CH 200V 32.7A TO220AB |
|
APT50M65B2FLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 67A T-MAX |
|
3LP01SS-TL-HRochester Electronics |
MOSFET P-CH 30V 100MA SMCP |
|
NVF3055L108T1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 3A SOT223 |
|
AOI294AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 55A TO251A |
|
IPD30N06S215ATMA2IR (Infineon Technologies) |
MOSFET N-CH 55V 30A TO252-31 |
|
IPW60R024P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 101A TO247-3-41 |