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NVATS5A112PLZT4G

NVATS5A112PLZT4G

MOSFET P-CH 60V 27A ATPAK

NVATS5A112PLZT4G

NVATS5A112PLZT4G

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Part No :

NVATS5A112PLZT4G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 60V 27A ATPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12335 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
NVATS5A112PLZT4G PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:27A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:43mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:33.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1450 pF @ 20 V
FET Feature:-
Power Dissipation (Max):48W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:ATPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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