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IRFH8318TRPBF

IRFH8318TRPBF

MOSFET N-CH 30V 27A/120A PQFN

IRFH8318TRPBF

IRFH8318TRPBF

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Part No :

IRFH8318TRPBF

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 27A/120A PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
977297 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IRFH8318TRPBF PDF
Type Description
Series:HEXFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:27A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3180 pF @ 10 V
FET Feature:-
Power Dissipation (Max):3.6W (Ta), 59W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PQFN (5x6)
Package / Case:8-PowerTDFN
IRFH8318TRPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRFH8318TRPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFH8318TRPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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